everspin代理MR256D08BMA45R磁性随机存储
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- 名称深圳市英尚微电子有限公司 【公司网站】
- 所在地中国 广东 深圳 宝安区
- 联系人 蔡晓菲
- 价格 面议 点此议价
- 采购量 不限制
- 发布日期 2024-07-17 16:10 至 长期有效
everspin代理MR256D08BMA45R磁性随机存储产品详情
- Density:256Kb
- Org.:32Kx8
- Pkg. :48-BGA
- MOQ(pcs) / Tray:2000
- MOQ(pcs)/ T&R:696
- 品牌:其他
- 封装形式:BGA
- 类型:数字集成电路
- 用途:电脑
- 功能:存储器
- 导电类型:双极型
- 封装外形:扁平型
- 集成度:大规模(100~10000)
- 加工定制:是
- 型号:MR256D08BMA45R
- 批号:18+
- 工作电源电压:3.3VDD, 1.8VDDQ
- 最大功率:具体参照规格书
- 工作温度:具体参照规格书
- 外形尺寸:具体参照规格书
英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片,SRAM,DRAM,各类存储器memory芯片ic,*代理,库存现货。
FEATURES
· +3.3 Volt power supply
· I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces
· Fast 45 ns read/write cycle
· SRAM compatible timing
· Unlimited read & write endurance
· Data always non-volatile for >20-years at temperature
· RoHS-compliant *all footprint BGA package
I*ODUCTION
The MR256D08B is a 262,144-bit magnetoresistive random acces*emory (MRAM) device organized as 32,768 wo* of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256D08B offers SRAM compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR256D08B is the ideal memory solution for applicati* that must permanently store and retrieve critical data and programs quickly.
The MR256D08B is *ailable in *all footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers.
The MR256D08B provides highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature (0 to +70 °C).
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