mram芯片MR256A08BYS35R集成电路芯片存储IC

英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。

I*ODUCTION

The MR256A08B is a 262,144-bitmagnetoresistive random acces*emory (MRAM) device organized as 32,768 wo*of 8 bits. The MR256A08B offers SRAM compatible 35ns read/write timing with un-limitedendurance.

Data is always non-volatile for greaterthan 20-years. Data is automatically protected on power loss by low-voltageinhibit circuitry to prevent writes with voltage out of specification.

The MR256A08B is the ideal memory solutionfor applicati* that must permanently store and retrieve critical data andprograms quickly.

The MR256A08B is *ailable in a *allfootprint 400-mil, 44-lead plastic *all-outline TSOP type-2 package, or an 8mm x 8 mm, 48-pin ball grid array (BGA) package. (The 32-SOIC package opti*is obsolete and no longer *ailable for new orders.) All package footprints arecompatible with similar low-power SRAM products and other non-volatile RAMproducts.

The MR256A08B provides highly reliable datastorage over a wide range of temperatures. The product is offered withcommercial temperature (0 to +70 °C) and industrial temperature (-40 to +85 °C)range opti*.