EVERSPIN MRAM芯片MR0A16AYS35R存储器
第一枪帮您来“拼单”，更多低价等你来！EVERSPIN MRAM芯片MR0A16AYS35R存储器
- 名称深圳市英尚微电子有限公司 【公司网站】
- 所在地中国 广东 深圳 宝安区
- 联系人 蔡晓菲
- 价格 面议 点此议价
- 采购量 不限制
- 发布日期 2023-10-18 17:12 至 长期有效
EVERSPIN MRAM芯片MR0A16AYS35R存储器产品详情
- Density:1Mb
- Org.:64Kx16
- Pkg. :44-TSOP2
- MOQ(pcs) / Tray:270
- MOQ(pcs)/ T&R:1500
- 品牌:其他
- 封装形式:TSOP
- 类型:数字集成电路
- 用途:军工
- 功能:存储器
- 导电类型:双极型
- 封装外形:扁平型
- 集成度:大规模(100~10000)
- 加工定制:是
- 型号:MR0A16AYS35R
- 批号:18+
- 工作电源电压:3.3V
- 最大功率:具体参照规格书
- 工作温度:具体参照规格书
- 外形尺寸:具体参照规格书
英尚微电子总代理NETSOL存储器sram|everspin存储器MRAM|jsc济州半导体|ISSI芯成|CYPRESS赛普拉斯ISSI存储芯片，SRAM,DRAM,各类存储器memory芯片ic,*代理，库存现货。
I*ODUCTION
The MR0A16A is a 1,048,576-bitmagnetoresistive random acces*emory (MRAM) device organized as 65,536 wo*of 16 bits. The MR0A16A offers SRAM compatible 35 ns read/write timing withunlimited endurance.
Data is always non-volatile for greaterthan 20 years. Data is automatically protected on power loss by low-voltageinhibit circuitry to prevent writes with voltage out of specification.
MR0A16A is the ideal memory solution forapplicati* that must permanently store and retrieve critical data andprograms quickly.
The MR0A16B is *ailable in a *allfootprint 48-pin ball grid array (BGA) package and a 44-pin thin *all outlinepackage (TSOP Type 2). These packages are compatible with similar low-powerSRAM products and other nonvolatile RAM products.
TheMR0A16A provides highly reliable data storage over a wide range oftemperatures. The product is *ailable with commercial temperature (0 to +70°C), industrial temperature (-40 to +85 °C), extended temperature (-40 to +105°C), and Automotive AEC-Q100 Grade 1 (-40 to +125°) temperature range opti*.
