MR2A08ACYS35存储器芯片Everspin MRAM

FEATURES

· Fast 35ns Read/Write Cycle

· SRAM Compatible Timing, Uses Existing SRAM Co*ollers Without Redesign

· Unlimited Read & Write Endurance

· Data Always Non-volatile for >20 years at Temperature

· One Memory Replaces Flash, SRAM, EEPROM and *SRAM in System forSimpler, More Efficient Design

· Replace battery-backed SRAM soluti* with MRAM to eliminate battery assembly, improving reliability

· 3.3 Volt Power Supply

· Automatic Data Protection on Power Loss

· Commercial, Industrial, Automotive Temperatures

· RoHS-Compliant SRAM TSO*ackage

· RoHS-Compliant SRAM BGA Package

· AEC-Q100 Grade 1 Qualified