并口mram MR2A08AYS35R缓存芯片内存IC
第一枪帮您来“拼单”,更多低价等你来!并口mram MR2A08AYS35R缓存芯片内存IC
- 名称深圳市英尚微电子有限公司 【公司网站】
- 所在地中国 广东 深圳 宝安区
- 联系人 蔡晓菲
- 价格 面议 点此议价
- 采购量 不限制
- 发布日期 2023-10-18 17:13 至 长期有效
并口mram MR2A08AYS35R缓存芯片内存IC产品详情
- Density:4Mb
- Org.:512Kx8
- Pkg. :44-TSOP2
- MOQ(pcs) / Tray:1500
- MOQ(pcs)/ T&R:270
- 品牌:其他
- 封装形式:TSOP
- 类型:数字集成电路
- 用途:音频
- 功能:存储器
- 导电类型:双极型
- 封装外形:扁平型
- 集成度:大规模(100~10000)
- 加工定制:是
- 型号:MR2A08AYS35R
- 批号:18+
- 工作电源电压:3.3V
- 最大功率:具体参照规格书
- 工作温度:具体参照规格书
- 外形尺寸:具体参照规格书
I*ODUCTION
The MR2A08A is a 4,194,304-bitmagnetoresistive random acces*emory (MRAM) device organized as 524,288 wo*of 8 bits. The MR2A08A offers SRAM compatible 35ns read/write timing withunlimited endurance. Data is always non-volatile for greater than 20 years.Data is automatically protected on power loss by low-voltage inhibit circuitryto prevent writes with voltage out of specification.
The MR2A08A is the ideal memory solutionfor applicati* that must permanently store and retrieve critical data andprograms quickly.
The MR2A08A is *ailable in a *allfootprint 400-mil, 44-lead plastic *all-outline TSOP type 2 package or an 8 mmx 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. Thesepackages are compatible with similar low-power SRAM products and othernon-volatile RAM products.
The MR2A08A provides highly reliable datastorage over a wide range of temperatures. The product is offered withcommercial temperature range (0 to +70 °C), industrial temperature range (-40to +85 °C), and AEC-Q100 Grade 1 temperature range (-40 to +125 °C) opti*.
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