存储芯片MR2A16AMYS35R并行mram

FEATURE

· Fast 35 ns Read/Write cycle

· SRAM compatible timing, uses existing SRAM co*ol-lers without redesign

· Unlimited Read & Write endurance

· Data non-volatile for >20 years at temperature

· One memory replaces Flash, SRAM, EEPROM and *SRAM in a system for simpler, more efficien*sign

· Replaces battery-backed SRAM soluti* with MRAM to improve reliability

· 3.3 volt power supply

· Automatic data protection on power loss

· Commercial, Industrial, Extended temperatures

· AEC-Q100 Grade 1 option

· All product*eet MSL-3 moisture sensitivity level

· RoHS-compliant SRAM TSOP2 and BGA Packages